| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2026 | 02 | WO/2025/062384 | A METHOD FOR SYNTHESIS OF METAL HALIDE PEROVSKITE (CSPBBR3) NANO/MICROCRYSTALS | IB2024/060200 | C30B 7/14 | INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH, PUNE (IISER PUNE) | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 02 | WO/2026/007732 | ANNEALING METHOD AND ANNEALING APPARATUS FOR CADMIUM TELLURIDE SERIES SEMICONDUCTOR CRYSTALS | CN2025/102779 | C30B 33/02 | BEIJING HAMAMATSU PHOTON TECHNIQUES INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 02 | WO/2026/008160 | CVD SIC PRODUCTION REACTOR HAVING A HEATING UNIT FOR HEATING A DEPOSITION SURFACE OF A SIC GROWTH SUBSTRATE | EP2024/069053 | C30B 25/10 | ZADIENT TECHNOLOGIES SAS | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 02 | WO/2026/008496 | CVD SiC PRODUCTION REACTOR HAVING A HEATING UNIT FOR HEATING A DEPOSITION SURFACE OF A SiC GROWTH SUBSTRATE | EP2025/068311 | C30B 25/10 | ZADIENT TECHNOLOGIES SAS | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 02 | WO/2026/009355 | SINGLE-CRYSTAL WAFER AND METHOD FOR PRODUCING SAME | JP2024/024140 | C30B 11/00 | UNION MATERIALS INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 02 | WO/2026/009808 | SUBSTRATE FOR GROUP III NITRIDE EPITAXIAL GROWTH, METHOD FOR MANUFACTURING SAME, AND EPITAXIAL FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD EACH USING SAME | JP2025/023021 | C30B 25/18 | SHIN-ETSU CHEMICAL CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی |